MSAFX10N90A mosfet equivalent, n-channel enhancement mode power mosfet.
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* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, su.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25° C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC
DRAIN
MAX. 900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25
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